Semi-Analytical Model for the Transient Operation of Gate-All-Around Charge-Trap Memories
نویسندگان
چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: IEEE Transactions on Electron Devices
سال: 2011
ISSN: 0018-9383,1557-9646
DOI: 10.1109/ted.2011.2159010